2% v/v HNO3 RINSE, 125mL

Memory Interferences result when isotopes of elements in a previous sample contribute to the signals measured in a new sample. Memory effects, or carryover, can result from sample deposition on the sampler and skimmer cones, as well as from the buildup of sample material in the plasma torch and spray chamber. The site where these effects occur is dependent on the element and can be minimized by flushing the system with a rinse blank between samples. The possibility of memory interferences should be recognized within an analytical run and suitable rinse times should be used to reduce them. The rinse times necessary for a particular element should be estimated prior to analysis.